[10a-N101-1~11] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-N101-2] Fabrication and characterization of Al_0.9Ga_0.1N channel HFETs via sputtering

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, Univ. Tokyo)

Keywords:

AlN,sputter,HEMT