[10a-N101-1~11] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[10a-N101-4] Quantum Structure Design of GaN-Based THz Quantum Cascade Lasers Considering High Lying Levels

〇Koki Yabe^1,2, Kazuki Nonaka^1,2, Takayuki Ishida¹, Sachie Fujikawa^2,1, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Keywords:

Quantum Cascade Laser,Nitride Semiconductors,Terahertz

The mechanism by which leakage currents through high-lying levels suppress population inversion in GaN/AlGaN terahertz quantum cascade lasers was investigated. Furthermore, quantum structure designs for suppressing leakage currents were proposed, and optical gain was achieved over a wide frequency range of 3–10 THz.