Presentation Information

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[10a-N101-7]In Flux Dependence in Direct Growth of InGaN on ScAlMgO4 Substrates by RF-MBE

〇Daisuke Kato¹, Yoshiaki Nishimura¹, Trang Nakamoto², Md Earul Islam³, Takashi Fuji³, Tsuguo Fukuda⁴, Ryuichi Sugie¹, Tsutomu Araki¹ (1.Ritumeikan Univ., 2.R-GIRO, 3.ROST, 4.Fukuda Crystal Lab.)

Keywords:

semiconductor

InGaN was directly grown on ScAlMgO4 substrates by RF-MBE, and the effects of In flux on crystallinity and surface morphology were investigated. Samples grown at In fluxes ranging from 2.8 to 3.2 x 10^-7 Torr were evaluated by XRD, SEM, and AFM. The results suggested N-rich growth at 2.8 x 10^-7 Torr and metal-rich growth at 3.2 x 10^-7 Torr, indicating that stoichiometric growth conditions exist near an In flux of 3.0 x 10^-7 Torr.

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