[10a-N102-1~9] KS5 Atomic Layer Process Group

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N102-3] Low-Temperature Crystallization of ZnO Thin Films via In Situ Plasma Bias ALD

〇Kosuke Ozawa¹, Ryo Miyazawa¹, Masanori Miura¹, Bashir Ahmmad Arima¹, Fumihiko Hirose¹ (1.Yamagata Univ.)

Keywords:

room temperature atomic layer deposition,ZnO,low temperature crystallization

For flexible device applications, the low-temperature crystallization of zinc oxide(ZnO) thin films via plasma-assisted room-temperature atomic layer deposition(RT-ALD) was investigated. As an alternative to thermal treatment, an "in situ plasma bias treatment"—where Ar ions were accelerated and impinged onto the substrate using a direct current (DC) bias voltage in each ALD cycle—was introduced. As a result, polycrystalline ZnO thin films were successfully obtained at low temperatures. Furthermore, the growth rate significantly increased to 0.204 nm/cycle, which is approximately four times higher than that of conventional RT-ALD.