The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentationKS Sessions organized by JSAP's Professional Group : KS5 Atomic Layer Process Group

[10a-N102-1~9]KS5 Atomic Layer Process Group

Thu. Sep 10, 2026 9:00 AM - 12:00 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:00 AM UTC
N102 (First Year Education Bld. N Block)
9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[10a-N102-1][Invited Talk] Atomic layer deposition for oxide semiconductors

〇Takanori Takahashi1, Yukiharu Uraoka1 (1.NAIST)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[10a-N102-2]Deposition Characteristics of In2O3 by ALD Using a Microwave Remote Plasma Source

〇Satoshi Maruya1, Tamai Toshihiro1, Takahashi Takanori2, Uraoka Yukiharu2 (1.HORIBA STEC, 2.NAIST)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N102-3]Low-Temperature Crystallization of ZnO Thin Films via In Situ Plasma Bias ALD

〇Kosuke Ozawa1, Ryo Miyazawa1, Masanori Miura1, Bashir Ahmmad Arima1, Fumihiko Hirose1 (1.Yamagata Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N102-4]Observation of competitive adsorption of TDMAT and TMA at sequential adsorption in room temperature atomic layer deposition

〇Hajime Kobayashi1, Ryo Miyazawa1, Masanori Miura1, Bashir Ahmmad Arima1, Fumihiko Hirose1 (1.Yamagata Univ)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N102-5]Temperature Dependence of the Growth Behavior of AlOx Thin Films Deposited by Plasma-Enhanced and Thermal Atomic Layer Deposition

〇Kohei Matsuo1, Naohiro Furutani1, Tomoki Uehara1, Takayuki Kobayashi1 (1.Samco Inc.)
10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[10a-N102-6][Invited Talk] Inside High Aspect Ratio Structures in Atomic Layer Processes: Measurement-Driven Visualization of Reactive Species Transport and Reaction Depth

〇Takayoshi Tsutsumi1 (1.Nagoya Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N102-7]Highly Flexible Control of Three-Dimensional Deposition Profiles Utilizing Film Property Distribution Formed by Atomic-Layer-Deposition (ALD) Process

〇Takashi Hamano1, Nobuyuki Kuboi1, Shoji Kobayashi1 (1.Sony Semiconductor Solutions Corporation)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-N102-8]Simplified Evaluation of Particle Arrival Characteristics in ALD Chamber Design

〇Akihiko Inada1, Kanomata Kensaku1, Sato Eiji1 (1.Creative Coatings Co., Ltd.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-N102-9]Atomic layer deposition of p-type SnO thin films using a liquid precursor, Sn(EtCp)2.

〇Fumikazu Mizutani1, Nobutaka Takahashi1, Tomomi Sawada2, Toshihide Nabatame2 (1.Kojundo Chem. Lab., 2.NIMS)
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