[10a-N102-1~9] KS5 Atomic Layer Process Group

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N102-4] Observation of competitive adsorption of TDMAT and TMA at sequential adsorption in room temperature atomic layer deposition

〇Hajime Kobayashi¹, Ryo Miyazawa¹, Masanori Miura¹, Bashir Ahmmad Arima¹, Fumihiko Hirose¹ (1.Yamagata Univ)

Keywords:

atomic layer deposition,complex oxide film

In this study, we aim to fabricate complex oxide films using two different metal-organic precursors at sequential adsorption atomic layer deposition (ALD) process. In situ observations of the adsorption reactions using multiple internal reflection infrared absorption spectroscopy (MIR-IRAS) revealed that post-dosed TMA adsorbs onto a surface saturated with TDMAT. Based on this finding, we first achieved saturated adsorption of TDMAT, a titanium oxide precursor, followed by exposure to TMA, an aluminum oxide precursor. We used X-ray photoelectron spectroscopy (XPS) measurements. The atomic ratio of the Al/Ti as a function of TMA exposure time revealed that the proportion of Ti decreases as the TMA dose increases.