[10a-N102-1~9] KS5 Atomic Layer Process Group

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-N102-9] Atomic layer deposition of p-type SnO thin films using a liquid precursor, Sn(EtCp)₂.

〇Fumikazu Mizutani¹, Nobutaka Takahashi¹, Tomomi Sawada², Toshihide Nabatame² (1.Kojundo Chem. Lab., 2.NIMS)

Keywords:

atomic layer deposition,tin monoxide,p-type semiconductor

Thin films of SnO were fabricated by atomic layer deposition using liquid bisethylcyclopentadienyltin (Sn(EtCp)₂) and H₂O. Hall measurements were performed on the SnO thin film fabricated using 1200 cycles of ALD, and it exhibited the characteristics of a p-type semiconductor.