Presentation Information
[10a-PA3-10]Observation of Dry Etch Damages in GaN Layers by Photoluminescence and Photothermal Deflection Spectroscopy
〇Daichi Mannen1, Tasuke Saito2,3, Chisato Ota1, Tomohiro Yamaguchi1, Takeyoshi Onuma1, Masatomo Sumiya3, Tohru Honda1 (1.Kogakuin Univ., 2.Univ. Tsukuba, 3.NIMS)
Keywords:
semiconductor,photoluminescence,photothermal deflection spectroscopy