The 87th JSAP Autumn Meeting 2026
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Poster presentation13 Semiconductors : 13.8 Optical properties and light-emitting devices

[10a-PA3-1~15]13.8 Optical properties and light-emitting devices

Thu. Sep 10, 2026 9:00 AM - 10:30 AM JST
Thu. Sep 10, 2026 12:00 AM - 1:30 AM UTC
PA3 (1st Gymnasium)

[10a-PA3-1]Electrodeposited Prussian Blue and PEDOT Electrochromic Devices

〇Watanabe Nao1, Yo Ishikawa1, Shuichi Sato1 (1.Tokyo Denki Univ.)

[10a-PA3-2]Fabrication and Characterization of OLEDs Based on Cubane-Type Copper(I) Iodide Complexes

〇Tsumugi Matsumoto1, Ami Ito1, Tsugumi Tomita1, Arata Okawa1, Naohiro Takahashi1, Hirotaka Kitoh-Nishioka1, Senku Tanaka1, Takashi Okubo1 (1.Kindai Univ.)

[10a-PA3-3]Synthesis and Evaluation of Emissive Properties of Eu Complexes Using Fluorinated β-Diketones as Major Ligands and Additional Auxiliary Ligands

〇Yuta Ichise1, Naoki Ohtani1 (1.Doshisha Univ.)

[10a-PA3-4]An Extended Upconversion Luminescence Model Incorporating Intermediate-Level Er-Er Energy Transfer in YVO4:Yb,Er Phosphors

〇Haruki Oonishi1, Koji Iwabuchi1, Tatsuro Ikura1, Ariyuki Kato1 (1.Nagaoka Univ. of Tech.)

[10a-PA3-5]Impurity-Reduced Synthesis and Luminescence of LaOF phosphor

〇Toshihiro Nonaka1, Shin-Ichi Yamamoto2 (1.Otemon Gakuin Univ., 2.Ryukoku Univ.)

[10a-PA3-6]The effect of Fe,Cr impurities on optical properties of Ce,Mg co-doped Y3(Al,Ga)5O12 single crystals

〇(M2)Hisato Suezumi1,2, Kei Kamada3,4, Liudmila Gushchina3, Masao Yoshino2,3, Satoshi Ishizawa2,3, Rikito Murakami4, Yuui Yokota5, Akira Yoshikawa2,3,4 (1.Grad. Sch. of Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.C&A Corp., 4.NICHe, Tohoku Univ., 5.Kyusyu Univ.)

[10a-PA3-7]Generative Models for Multicomponent Crystals and Their Application to Phosphor Materials

〇(M2)Manato Omori1, Hayato Higuchi2, Masaya Miyagawa2, Hiromitu Takaba2 (1.Sch. Adv. Eng. Kogakuin Univ., 2.Chem., Kogakuin Univ.)
English Presentation

[10a-PA3-8]First-Principles Investigation of Defect Luminescence in ZnO Mechanoluminescent Materials

〇(D)guangfa yang1, Reona Omori1, Tomoki Uchiyama1, Ying Chen1, Xu-Guang Zheng1,2, Chao-Nan Xu1 (1.Tohoku University, 2.Saga University)

[10a-PA3-9]Analysis of Exciton and Biexciton Dynamics in Inorganic–Organic 2D Perovskite

〇(M2)Masahiro Tokunaga1, Chikako Akagi1, Kazuhiro Ema1, Hideyuki Kunugita1 (1.Sophia Univ.)

[10a-PA3-10]Observation of Dry Etch Damages in GaN Layers by Photoluminescence and Photothermal Deflection Spectroscopy

〇Daichi Mannen1, Tasuke Saito2,3, Chisato Ota1, Tomohiro Yamaguchi1, Takeyoshi Onuma1, Masatomo Sumiya3, Tohru Honda1 (1.Kogakuin Univ., 2.Univ. Tsukuba, 3.NIMS)

[10a-PA3-11]Impact of miniaturization on surface leakage current in GaN-Based monolithically integrated LEDs

〇Ikoi Sato1, Daichi Mannen1, Mao Kimura1, Tomohiro Yamaguchi1, Takeyoshi Onuma1, Tohru Honda1 (1.Kogakuin Univ.)

[10a-PA3-12]Theoretical analysis of 1.65 µm Si/CaF2 DFB quantum cascade lasers

〇(M2)Shutang Qi1, Zhiyuan Fan1, Masahiro Watanabe1 (1.Science Tokyo)

[10a-PA3-13]Growth of ZnTe microcrystals by a vapor transport method and evaluation

〇Kouki Hirano1, Shunji Ozaki1 (1.Gunma Univ.)

[10a-PA3-14]Crystal growth and optical evaluation of Ag2ZnGeS4 and Cu2ZnGeS4 semiconductors

〇Taisei Kurosawa1, Shunji Ozaki1 (1.Gunma Univ.)

[10a-PA3-15]Growth of Cu2SnS3 semiconductor crystal and evaluation of bandgap energy

〇Kyohei Kurita1, Shunji Ozaki1 (1.Gunma Univ)
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