Presentation Information
[10a-PB4-13]Numerical Analysis of Void Formation Conditions at InP/Si Hydrophilic Bonding Interface
〇(M2)RUIQI ZHANG1 (1.Sophia University)
Keywords:
InP/Si hydrophilic bonding,Gibbs free energy
Integration of InP-based optical devices on Si substrates is an effective approach for achieving both CMOS compatibility and high-efficiency light-emitting devices. However, at the InP/Si bonding interface formed by hydrophilic direct bonding, voids are generated and evolve during the bonding and annealing processes, significantly affecting the bonding quality. In this study, numerical analysis of void formation conditions during annealing was performed based on a Gibbs free energy model, using the pressure difference Δp and the critical radius as key parameters.