[10a-PB4-1~13] 3.12 Semiconductor optical devices | The 87th JSAP Autumn Meeting 2026

Session Details

Poster presentation3 Optics and Photonics : 3.12 Semiconductor optical devices

[10a-PB4-1~13]3.12 Semiconductor optical devices

Thu. Sep 10, 2026 11:00 AM - 12:30 PM JST
Thu. Sep 10, 2026 2:00 AM - 3:30 AM UTC

PB4 (2nd Gymnasium)

[10a-PB4-1]Development of Inertial Fusion Modules using Blue-Violet Laser Diodes

〇Hiyori Uehara^1,6, Takao Miyajima¹, Tetsuya Takeuchi⁴, Kentaro Iwami⁵, Miho Ishii-Teshima¹, Yoshikazu Yamaoka¹, Yoshitaka Mori^2,3 (1.NIFS, 2.EX-Fusion, 3.GPI, 4.Meijo Univ., 5.TUAT, 6.SOKENDAI)

[10a-PB4-2]Broadband InP/EO-Polymer Optical Modulators with Photonic Crystal Structures Using Group-Index Control and Segmented Electrode Structure

〇Kensuke Ikai^1,2, Junichi Fujikata^1,2 (1.Tokushima Univ., 2.Tokushima Univ pLED)

[10a-PB4-3]Fabrication of near-infrared image sensors using Ge epitaxial layer on Si

〇Keisuke Hatasa¹, Yuki Yoshino¹, Ryoya Ogura¹, Jose A. Piedra-Lorenzana¹, Yoshiko Noda¹, Daisuke Akai¹, Takeshi Hizawa¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.)

[10a-PB4-4]Evaluation of leakage current in pin photodetectors of strain-enhanced Ge layer on SOQ

〇Ryota Ishikawa¹, Ryoya Ogura¹, Soki Matsushita¹, Naoki Hamada¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Toshimasa Umezawa², Naokatsu Yamamoto², Kouichi Akahane², Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech., 2.NICT)

[10a-PB4-5]Helicity-dependent photocurrent induced by near-infrared femtosecond pulses in single-crystal Te

〇Kohei Miyazaki¹, Hiro Munekata¹, Gakuto Kusuno¹, Tetsuya Nomoto², Fumitaka Kagawa^1,2, Takuya Satoh^1,3 (1.Science Tokyo, 2.RIKEN CEMS, 3.QuaRC, Inst. for Molecular Science)

[10a-PB4-6]Propagation characteristics of crossing waveguides for polarization-independent
optical triplexer

〇(M2)Chisato Akimoto¹, Hideki Yokoi^1,2 (1.Shibaura Inst. of Technol., 2.Center for Next Generation Semiconductor Human Resources)

[10a-PB4-7]Nonreciprocal Phase Shifts in Magneto-optic Waveguides with Si Guiding Layer

〇(M2)Hinata Sukegawa¹, Hideki Yokoi^1,2 (1.Shibaura Inst. of Technol., 2.Center for Next Generation Semiconductor Human Resources)

[10a-PB4-8]Mode Dependence of the Linewidth Enhancement Factor in Gain-Switched Multimode Laser Diodes

〇KYOSUKE TANAKA¹, KENJI WADA², TETSUYA MATSUYAMA¹, SHUNSUKE MURAI¹, KOICHI OKAMOTO¹, FUMIYOSHI KUWASHIMA³ (1.Osaka Metro. Univ., 2.OShaRE, 3.Otemon Gakuin Univ.)

[10a-PB4-9]Optimization of Cladding Layers in GaInAsP/InP Quantum-Well Lasers on InP/Si Substrates

〇Koki Tominaga¹, Kuroi Mizuki¹, Holt Mizuki¹, Shimomura Kazuhiko¹ (1.Sophia University)

[10a-PB4-10]Lasing Characteristics of 1.5-μm-Band GaInAsP MQW High-Mesa Laser Diodes on Directly Bonded InP/Si Substrate

〇(M1)Zhiyang Sheng¹, Shuo Yao¹, Shiyao Wei¹, Qiguang Jia¹, Rong Le¹, Mizuki Holt¹, Koki Tominaga¹, Ruiqi Zhang¹, Kazuhiko Shimomura¹ (1.Sophia University)

[10a-PB4-11]Study of Low-Threshold Design for Strained Quantum-Well LDs Grown on InP/Si Substrates

〇Mizuki Holt¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

[10a-PB4-12]Improvement of Lasing Characteristics in 1.5-μm Band GaInAsP MQW Ridge Laser Diodes on InP/Si Substrates by Silver Nanoparticle Bonding

〇RONG LE¹, QIGUANG JIA¹, ZHIYANG SHENG¹, SHUO YAO¹, RUIQI ZHANG¹, SHIYAO WEI¹, JUNYU SHEN¹, MIZUKI HOLT¹, KOKI TOMINAGA¹, KAZUHIKO SHIMOMURA¹ (1.Sophia Univ.)

[10a-PB4-13]Numerical Analysis of Void Formation Conditions at InP/Si Hydrophilic Bonding Interface

〇(M2)RUIQI ZHANG¹ (1.Sophia University)

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