Presentation Information
[10a-PB4-4]Evaluation of leakage current in pin photodetectors of strain-enhanced Ge layer on SOQ
〇Ryota Ishikawa1, Ryoya Ogura1, Soki Matsushita1, Naoki Hamada1, Jose A. Piedra-Lorenzana1, Takeshi Hizawa1, Toshimasa Umezawa2, Naokatsu Yamamoto2, Kouichi Akahane2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.NICT)
Keywords:
Germanium on Silicon,photodetector,lattice strain