Presentation Information
[10a-PB4-9]Optimization of Cladding Layers in GaInAsP/InP Quantum-Well Lasers on InP/Si Substrates
〇Koki Tominaga1, Kuroi Mizuki1, Holt Mizuki1, Shimomura Kazuhiko1 (1.Sophia University)
Keywords:
semiconductor,laser diode,MOVPE
This study focuses on silicon photonics as a means of reducing power consumption in information processing, which continues to increase with the spread of IoT and AI. GaInAsP/InP quantum-well lasers fabricated on InP/Si and InP substrates were investigated by varying the carrier concentration and thickness ratio of the p-cladding layers. The lasing characteristics after MOVPE growth were evaluated. As a result, optimization of the layer thickness ratio reduced the average threshold current density and suppressed its variation.