[10a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-S1-1] [The 60th Young Scientist Presentation Award Speech] Self-Turn-On Analysis of a Trench Field-Plate Power MOSFET with Floating Electrodes

〇Satoshi Hoshida¹, Daichi Ishii¹, Shuhei Tokuyama¹, Toshifumi Nishiguchi¹, Takuma Hara¹, Kenji Maeyama¹, Tsuyoshi Kachi¹, Hiroaki Kato¹ (1.Toshiba Electronic Devices & Storage Corporation)

Keywords:

Trench Field-Plate Power MOSFETs,Self-Turn-On,Floating Electrode

In low-voltage (<300 V) Si power MOSFETs, a trench field-plate structure with a gate electrode and a source field-plate electrode in the same trench is widely used. In previous studies, we showed that replacing part of the source field-plate electrode with floating electrodes reduces parasitic capacitance. In this study, we analyze self-turn-on in the proposed trench field-plate power MOSFET with floating electrodes and show that the reduction of parasitic capacitance suppresses self-turn-on.