[10a-S1-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-S1-9] High Performance GeOI (111) nMOSFETs with Ge-Bi-Te S/D Contact

〇WENHSIN CHANG¹, S. HATAYAMA¹, N. OKADA¹, T. IRISAWA¹, T. MAEDA¹, Y. SAITO^2,1 (1.SFRC, AIST, 2.Tohoku Univ.)

Keywords:

Ge,Bi2Te3,MOSFET