[10a-S2-1~11] 17.1 Growth, Assembly, Structure control

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-S2-11] Emergence of transistor functions using metastable layered semiconductor SiTe₂

〇Kohki Tonoike¹, Mihyeon Kim¹, Yuta Saito^2,1 (1.Tohoku Univ., 2.Tohoku Univ. GXT)

Keywords:

2D material,SiTe2,metastable

For the development of next-generation transistors, the emergence of pure P-type behavior in layered materials is a matter of urgency. This research expands its scope to include metastable phases in its material development. SiTe₂, a metastable layered material, has been reported to have semiconductor properties, but large-area deposition technology is scarce. Therefore, we attempted large-area deposition via sputtered-amorphous crystalizaiton. The fabricated transistors exhibited P-type behavior. This presentation will further describe improvements to device performance.