The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.1 Growth, Assembly, Structure control

[10a-S2-1~11]17.1 Growth, Assembly, Structure control

Thu. Sep 10, 2026 9:00 AM - 12:00 PM JST
Thu. Sep 10, 2026 12:00 AM - 3:00 AM UTC
S2 (First Year Education S Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-S2-1]Evaluation of Se defects in monolayer WSe2 using conductive AFM

〇Yuta Sawai1,2, Wenjin Zhang1, Ryotaro Sakakibara1, Shoji Yoshida3, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ, 3.Tsukuba Univ)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-2]Effect of hBN Thickness on Conductive AFM Imaging of hBN/WSe2

〇Yuki Shimomura1,2, Yuta Sawai1,2, Ryotaro Sakakibara1, Kenji Watanabe1, Takashi Taniguchi1, Shoji Yoshida3, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ., 3.Tsukuba Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-3]Heterophase Homocontact Transistors Based on Amorphous MoS2/Monolayer MoS2 Contact

〇Toshiya Sasaki1, Mihyeon Kim1, Fons Paul2, Wen Hsin Chan3, Takahiko Endo4, Yasumitsu Miyata4, Yuta Saito1,3,5 (1.Tohoku Univ., 2.Keio Univ., 3.AIST, 4.NIMS, 5.Tohoku Univ. GXT)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-4]Formation of amorphous Ru-B contact for MoS2 channel

〇(M1)Koume Fujita1, Toshiya Sasaki1, Mihyeon Kim1, Tianyishan Sun2, Toshiaki Kato2, Yuta Saito1,3 (1.Tohoku Univ., 2.AIMR, Tohoku Univ., 3.GXT, Tohoku Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[10a-S2-5]Formation of NbSe2/WSe2 van der Waals Contact via Solid-Phase Epitaxy

〇Ryotaro Sakakibara1, Yasumitsu Miyata1 (1.NIMS)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-S2-6]Sputtering-assisted Post-doping of V atoms into Monolayer MoS2

〇Ryotaro Sakakibara1, Zih-Siang Jian1,2,3, Yuta Sawai1,4, Wen-Hao Chang2,3, Yasumitsu Miyata1,4 (1.NIMS, 2.NYCU, 3.Academia Sinica, 4.Tokyo Metro. Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-7]Concurrent Formation Process for Multi-Stacked TMDC Nanosheet Structures

〇HAO CHENG1, Shinichi Tanabe1, Naoya Okada2, Toshifumi Irisawa2, Hitoshi Miura1, Hisashi Warashina1, Yu-min Huang1, Keiichi Nagasaka1, Atsuki Fukazawa1, Hiroki Maehara1 (1.Tokyo Electron Ltd., 2.SFRC AIST)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-S2-8]Thick Doped MoS2 Source/Drain Formation for Multi-Stacked TMDC Nanosheet FETs

〇Naoya Okada1, Shinichi Tanabe2, Toshifumi Irisawa1, Hao Cheng2, Hitoshi Miura2, Keiichi Nagasaka2, Atsuki Fukazawa2, Hiroki Maehara2 (1.SFRC, AIST, 2.TEL)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-9]Fabrication of SnS thin films by vacuum evaporation and effects of source composition on crystal orientation and electrical properties

〇(M1)Kiyotatsu Kudo1, Mihyeon Kim1, Yoshitaro Nose2, Yuta Saito1,3 (1.Tohoku Univ., 2.Konan Univ., 3.GXT, Tohoku Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-10]Fabrication of p-type transistor devices of metastable van der Waals semiconductor material GeTe2 and investigation of electrode metals

〇(D)Yu Kato1, Mihyeon Kim1, Yuta Saito1,2 (1.Tohoku Univ., 2.GXT, Tohoku Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[10a-S2-11]Emergence of transistor functions using metastable layered semiconductor SiTe2

〇Kohki Tonoike1, Mihyeon Kim1, Yuta Saito2,1 (1.Tohoku Univ., 2.Tohoku Univ. GXT)
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