[10a-S2-1~11] 17.1 Growth, Assembly, Structure control

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-S2-7] Concurrent Formation Process for Multi-Stacked TMDC Nanosheet Structures

〇HAO CHENG¹, Shinichi Tanabe¹, Naoya Okada², Toshifumi Irisawa², Hitoshi Miura¹, Hisashi Warashina¹, Yu-min Huang¹, Keiichi Nagasaka¹, Atsuki Fukazawa¹, Hiroki Maehara¹ (1.Tokyo Electron Ltd., 2.SFRC AIST)

Keywords:

TMDC,nanosheet,MoS2

With the continued scaling and integration of semiconductor devices, device architectures are shifting toward gate-all-around (GAA) transistors, which Si nanosheets are vertically stacked on substrate. In parallel, transition metal dichalcogenides (TMDCs), represented by MoS₂, have attracted attention as future channel materials to replace Si. For TMDC-based devices, the fabrication of nanosheet structures remains a key challenge in addition to large-area film formation. Previously, we demonstrated a wafer-scale TMDC formation technique based on the Three-Step Conversion (3SC) method, which consists of chalcogenization annealing of initial films followed by crystallization annealing. In this work, we report the successful fabrication of multi-stacked TMDC nanosheet structures using this method.