[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-A21-1] Comparison of GaN HEMT Overvoltage Stress Behavior between UIS and CIS Tests

〇Wataru Saito¹, Shin-ichi Nishizawa¹ (1.Kyushu Univ.)

Keywords:

GaN-HEMT,overvoltage stress,avalanche breakdown

GaN-HEMTs have widely adoped as power devices that enable highly efficient power conversion owing to their low on-resistance and high-speed switching capabilities. However, a critical issue is that device destructs by avalanche breakdown induced under high-voltage stress. Previous studies have reported the failure process of GaN-HEMTs under repetitive overvoltage stress testing. In this talk, we report the results of an analysis of the influence of carriers on overvoltage failure in GaN-HEMTs by comparing their behavior under Unclamped Inductive Switching (UIS) and Clamped Inductive Switching (CIS) conditions.