The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[10p-A21-1~19]13.7 Compound and power devices, process technology and characterization

Thu. Sep 10, 2026 2:00 PM - 7:00 PM JST
Thu. Sep 10, 2026 5:00 AM - 10:00 AM UTC
A21 (Faculty of Info. Sci. & Tech. Bldg.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-A21-1]Comparison of GaN HEMT Overvoltage Stress Behavior between UIS and CIS Tests

〇Wataru Saito1, Shin-ichi Nishizawa1 (1.Kyushu Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-2]Ultrawide Temperature Range Operation of AlN-based SBDs with Distributed Polarization Doping

〇Issei Sasaki1, Masanobu Hiroki2, Kazuyuki Hirama2, Yoshitaka Taniyasu2, Takuya Maeda1 (1.UTokyo, 2.NTT-BRL)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-3]Channel temperature evaluation of GaN HEMT under RF large-signal operation

〇Ken Kudara1, Yutaro Yamaguchi1, Shuichi Sakata1 (1.Mitsubishi Electric)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-4]GaN HEMT Thermal Dissipation Improvement using an AlN Interlayer Dielectric

〇Yuya Tsutsumi1, Takahide Hirasaki1, Yukihiro Tsuji1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric Industries, Ltd)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-5]Nitride/diamond junctions for improved thermal dissipation

〇(M2)Hikaru Iwamoto1, Akira Rin1, Naoteru Shigekawa1 (1.Osaka Metropolitan Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-6]Enhancement of 2DEG mobility in ScAlN/GaN heterostructures by inserting AlN interlayer

〇Kouei Kubota1, Yusuke Wakamoto1, Hikaru Sasaki1, Kosuke Joya1, Tomoya Fuji1, Takahiko Kawahara2, Shigeki Yoshida2, Kozo Makiyama2, Ken Nakata2, Ryosho Nakane1, Takuya Maeda1 (1.The University of Tokyo, 2.Sumitomo Electric Industries, Ltd.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-7]Shubnikov-de Haas Oscillations of 2DEG in a NbAlN/AlGaN/AlN/GaN Heterostructure

〇Yusuke Wakamoto1, Tomoya Okuda2, Sota Kurogi2, Atsushi Kobayashi2, Takuya Maeda1 (1.UTokyo, 2.Tokyo Univ. of Sci.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[10p-A21-8]Buffer Impurity Concentration Dependence of Current Collapse in N-polar GaN HEMTs

〇Akihiro Hayasaka1, Junya Yaita1, Shigeki Yoshida1, Maui Hino1, Akira Mukai1, Junji Kotani1, Kozo Makiyama1, Ken Nakata1 (1.Sumitomo Electric)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-A21-9]High-Temperature Operation of N-polar GaN/AlGaN/AlN HEMTs with SiO2 Passivation

〇Amane Hayashiuchi1, Aina Hiyama Zazuli1, Nobuteru Hirata1, Yuuya Kitamura1, Satoshi Kurai1, Masanobu Hiroki2, Kazuyuki Hirama2, Yoshitaka Taniyasu2, Narihito Okada1 (1.Yamaguchi Univ., 2.NTT BRL.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-A21-10]Wafer bonding between GaN epitaxial layers grown on OVPE-GaN and Diamond for fabricating N-polar GaN-on-Diamond

〇Masafumi Yokoyama1, Kiyotoshi Iimura1, Tatsuya Moriyama2, Sogo Yokoi2, Shigeyoshi Usami2, Masayuki Imanishi2, Hikaru Iwamoto3, Naoteru Shigekawa3, Junichi Takino4, Tomoaki Sumi4, Yoshio Okayama4, Atsushi Tanaka5, Yoshio Honda5, Hiroshi Amano5, Yusuke Mori2 (1.Sumitomo Chemical Co., Ltd., 2.The Univ. of Osaka, 3.Osaka Metropolitan Univ., 4.Panasonic Holdings Corp., 5.Nagoya Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-11]Investigation of Vertical Breakdown Characteristics in AlGaN/GaN HEMTs on Si

〇Masato Yoshino1, Takuma Nanjo1, Masayuki Furuhashi2, Tatsuro Watahiki2, Takashi Egawa1 (1.Nagoya Inst of Tech, 2.Mitsubishi Electric Corporation)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[10p-A21-12]Carrier transport of 2DEG in AlGaN/GaN heterostructures grown on insulative GaN substrates

〇Masatomo Sumiya1, Reijin Masuda1,2, Yasutaka Imanaka1, Jun Kikkawa1, Toru Honda2 (1.NIMS, 2.Kogakuin Univ.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[10p-A21-13]Effective mass in high-density AlGaN/GaN heterostructures

〇Yasutaka Imanaka1, Masatomo Sumiya1 (1.NIMS)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[10p-A21-14]Investigation of Structural and Process Dependence in 2DEG Concentration Control Using Ultra Thin AlGaN/GaN Structures

〇(M1)Shota Miyazaki1, Takuma Nanjo1, Masayuki Furuhashi2, Tatsuro Watahiki2, Toshiharu Kubo1, Takashi Egawa1 (1.Nagoya Inst., 2.Mitsubishi Cor.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[10p-A21-15]Mechanism of Current Collapse Suppression by an AlGaN Cap Layer

〇Shugo Nishimura1, Yusuke Nakazato1, Kazuki Kiyohara1, Kosuke Miura1, Takahiro Saito1, Shintaro Ueda1, Akira Yoshioka1 (1.Toshiba Electronic Devices & Storage Corporation)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-16]Electrical Characterisitics of Gate-First AlGaN/GaN HEMTs with Field Plates

〇Takuya Fujimoto1, Yuji Ando1,2, Hidemasa Takahashi1, Ryutaro Makisako1, Jun Suda1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[10p-A21-17]Analysis of the anisotropy in the valence-band structure of GaN using angle-resolved photoemission spectroscopy

〇AKihira Munakata1, Takahito Takeda1, Hikaru Sasaki1, Yoshinori Nakagawa2, Atsushi Fujimori3,4, Takuya Maeda1, Masaki Kobayashi1,5 (1.School of Engineering, UTokyo, 2.Nichia Corporation, 3.School of Science, UTokyo, 4.National Tsing Hua Univ., 5.CSRN, UTokyo)
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-18]Evaluation of high-density 2DEG in AlGaInN/AlN/GaN heterostructures based on XPS near-interface composition

〇Ryo Wakizako1, Yuto Yamada1, Atsushi Tanaka2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[10p-A21-19]Characterization of Interfacial Reaction and Chemical Bonding Features of AlN/GaN Stacked Structures

〇Sora Oya1, Yuki Imai1, Kotaro Ozaki1, Kenji Ito2, Katsunori Makihara1 (1.Nagoya Univ. Emg., 2.Nagoya Univ. IMaSS)
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