[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-11] Investigation of Vertical Breakdown Characteristics in AlGaN/GaN HEMTs on Si

〇Masato Yoshino¹, Takuma Nanjo¹, Masayuki Furuhashi², Tatsuro Watahiki², Takashi Egawa¹ (1.Nagoya Inst of Tech, 2.Mitsubishi Electric Corporation)

Keywords:

AlGaN/GaN HEMT,Strained-Layer Superlattice,Power Devices

To improve the vertical breakdown voltage of AlGaN/GaN HEMTs on Si substrates, HEMTs incorporating a strained-layer superlattice (SLS) structure were fabricated, and the current–voltage characteristics between the surface electrode and the Si substrate were evaluated. As a result, breakdown voltages exceeding 1 kV were achieved under both forward and reverse bias conditions. In addition, a larger leakage current was observed under reverse bias, indicating that the internal electric field induced by polarization charges at the SLS interfaces affects carrier transport characteristics. Furthermore, it was demonstrated that the SLS structure is effective for sustaining high vertical voltages.