[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[10p-A21-14] Investigation of Structural and Process Dependence in 2DEG Concentration Control Using Ultra Thin AlGaN/GaN Structures

〇(M1)Shota Miyazaki¹, Takuma Nanjo¹, Masayuki Furuhashi², Tatsuro Watahiki², Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst., 2.Mitsubishi Cor.)

Keywords:

semiconductor

The structural and process dependence of two-dimensional electron gas (2DEG) concentration was investigated in an Extrinsically electron Induced by Dielectric (EID) structure using ultra-thin AlGaN/GaN. SiO2 and Al2O3 films were deposited on epitaxial layers on Si substrates, and Hall characteristics were evaluated under various heat treatment conditions. The results revealed that the 2DEG concentration varied by up to five times depending on the specific conditions. This variation is attributed to differences in surface pinning energy altered by the dielectric deposition, and the results suggested that changes in surface roughness might influence the carrier mobility.