[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[10p-A21-15] Mechanism of Current Collapse Suppression by an AlGaN Cap Layer

〇Shugo Nishimura¹, Yusuke Nakazato¹, Kazuki Kiyohara¹, Kosuke Miura¹, Takahiro Saito¹, Shintaro Ueda¹, Akira Yoshioka¹ (1.Toshiba Electronic Devices & Storage Corporation)

Keywords:

power device,GaN HEMT,current collapse

GaN HEMTs are expected to be next-generation power devices because they can realize high-breakdown-voltage devices with both low on-resistance and low capacitance. However, GaN HEMTs suffer from current collapse phenomena, wherein electric-field concentration under high-voltage operation causes electron trapping, resulting in an increase in on-state resistance. We have previously confirmed that current collapse phenomena can be suppressed by introducing a thin high-Al-content AlGaN cap layer on the AlGaN barrier surface. In this report, we present investigation results on the suppression mechanism of the current collapse phenomena.