[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-18] Evaluation of high-density 2DEG in AlGaInN/AlN/GaN heterostructures based on XPS near-interface composition

〇Ryo Wakizako¹, Yuto Yamada¹, Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)

Keywords:

semiconductor,GaN-HEMT,AlGaInN

AlGaInN is expected to be a promising novel barrier material for GaN HEMTs because it has two composition degrees of freedom, Al and In mole fractions, enabling independent control of polarization charge and lattice constant. In this study, AlGaInN/AlN/GaN heterostructures with different AlGaInN compositions were grown by controlling the TMA gas-phase ratio during MOVPE. The near-interface composition was evaluated by XPS, and the electrical properties were characterized by Hall measurements, demonstrating the formation of high-density 2DEG and low sheet resistance.