[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-2] Ultrawide Temperature Range Operation of AlN-based SBDs with Distributed Polarization Doping

〇Issei Sasaki¹, Masanobu Hiroki², Kazuyuki Hirama², Yoshitaka Taniyasu², Takuya Maeda¹ (1.UTokyo, 2.NTT-BRL)

Keywords:

DPD,AlN,cryogenic

AlN-based Schottky barrier diodes (SBDs) with compositionally graded AlGaN drift layers can induce carriers by distributed polarization doping (DPD), without relying on impurity doping. We have previously demonstrated an AlN-based SBD using DPD that exhibited the lowest specific on-resistance ever reported. In this study, we report the temperature characteristics of AlN-based SBDs using DPD, measured over a wide temperature range from cryogenic to ultrahigh temperatures.