[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-3] Channel temperature evaluation of GaN HEMT under RF large-signal operation

〇Ken Kudara¹, Yutaro Yamaguchi¹, Shuichi Sakata¹ (1.Mitsubishi Electric)

Keywords:

GaN HEMT,channel temperature,Large-signal operation

We established a method for evaluating channel temperature during large-signal operation of a GaN HEMT. A low voltage was applied to the source field plate, and the temperature was estimated from the resistance change. The channel temperature under large-signal operation was evaluated at stage temperatures from 25 to 150°C, confirming that the channel temperature increased as the input power increased. In addition, efficiency and channel-temperature contours were obtained during load-pull measurements, revealing that temperature rises as efficiency decreases.