[10p-A21-1~19] 13.7 Compound and power devices, process technology and characterization

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A21-5] Nitride/diamond junctions for improved thermal dissipation

〇(M2)Hikaru Iwamoto¹, Akira Rin¹, Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ.)

Keywords:

nitride semiconductor,diamond,surface-activated bonding

We previously fabricated GaN HEMTs using nitride semiconductor layers transferred onto diamond substrates by surface-activated bonding and demonstrated a reduction in thermal resistance. In this study, toward the optimization of thermal design, an AlGaN/GaN heterostructure grown on Si (111) with an AlN buffer layer was thinned and transferred to a single-crystal diamond substrate.