Presentation Information
[10p-A23-1]Cavity Orientation Dependence of InAs Quantum Dot Lasers on InGaAs Metamorphic Layers
〇JINKWAN KWOEN1,2, Hiroki Inoue2, Masahiro Kakuda2, Atsushi Matsumoto1, Naokatsu Yamamoto1, Kouichi Akahane1, Yasuhiko Arakawa2 (1.NICT, 2.Univ. Tokyo)
Keywords:
quantum dot lasers,quantum dot,molecular beam epitaxy
Self-assembled InAs quantum dot lasers formed on GaAs substrates have attracted considerable attention because of their low threshold current density, high temperature stability, and high tolerance to crystal defects. Since InAs/GaAs quantum dots intrinsically emit in the O-band region, InGaAs metamorphic buffer layers (MBLs) are widely used as a technique for extending the emission wavelength to longer wavelengths. InGaAs metamorphic buffer layers grown on GaAs(001) substrates exhibit in-plane anisotropy along the [110] and [1-10] directions. As a result, crosshatch and mound structures are formed on the surface. In particular, in edge-emitting lasers, such asymmetric defect distributions may induce direction-dependent scattering losses and nonradiative recombination, potentially leading to cavity-orientation-dependent device characteristics. In this study, we investigated the cavity-orientation dependence of InAs quantum dot lasers by performing polarization-resolved photoluminescence (PL) measurements and evaluating the cavity-orientation dependence of Fabry–Perot (FP) lasers.