[10p-A23-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[10p-A23-10] Growth of InAs thin films by lateral overgrowth from InAs nanowires on Si substrates (2)

〇Toshiyuki Kaizu^1,2, Naoya Miyashita^2,1, Koichi Yamaguchi^2,1 (1.QFCD2 center, Univ. Electro-Comm., 2.Dep. of Eng. Sci., Univ. Electro-Comm.)

Keywords:

nanowire,lateral overgrowth,Photoluminescence