[10p-A23-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[10p-A23-11] Self-Catalyzed Growth of Pure Zinc-Blende GaAs Nanowires on SiO_x/Si(111) Wafers via Droplet Etching

〇Keisuke Minehisa¹, Yoshitaka Taniyasu², Kazuyuki Hirama², Kazuhide Kumakura¹, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.NTT BRL)

Keywords:

nanowire,III-V compound semiconductor,molecular beam epitaxy (MBE)