[10p-A23-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[10p-A23-13] Improvement of Vertical InGaAs Nanowire Yield in Selective-Area Growth on Si Using Metal/Insulator Composite Mask

〇Keita Taniyama¹, Hitoshi Watanabe¹, Yuki Azuma¹, Katsuhiro Tomioka¹ (1.GS of IST and RCIQE, Hokkaido Univ.)

Keywords:

III-V,Nanowire