Presentation Information

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-A23-8]Strain Characterization of GaAs/GaNAs/GaAs Core-multishell Nanowires with Contoroled GaNAs Shell Thickness

〇Yusuke Shiomi^1,2, Mahiro Sano^1,2, Keisuke Minehisa^1,2, Fumitaro Ishikawa¹ (1.Hokkaido Univ. RCIQE, 2.Hokkaido Univ. IST)

Keywords:

nanowires,molecular beam epitaxy

In this presentation, GaAs/GaNAs/GaAs core–multishell nanowires with GaNAs shell thicknesses ranging from 0 to 125 nm were grown on Si(111) substrates by molecular beam epitaxy. The thickness dependence of their photoluminescence, optical absorption, and strain states was investigated. Reciprocal space mapping revealed that the single diffraction peak originating from GaAs nanowires shifted in both Qx and Qz directions with increasing GaNAs shell thickness, indicating an average reduction in lattice spacing in both in-plane and out-of-plane directions. The observed peak shift was discussed using a cylindrical elastic strain model.

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