Presentation Information

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-B12-4]Design of optimal inhibitors for area-selective atomic layer deposition by means of random sequential adsorption simulations

〇Haruhide Miyagi¹, Shogo Shimada¹, Atsuro Seino¹, Kimihiko Nakatani¹, Hajime Karasawa¹, Takafumi Sasaki¹ (1.KOKUSAI ELECTRIC CORPORATION)

Keywords:

area-selective atomic layer deposition,random sequential adsorption,inhibitor

We analyzed the adsorption of inhibitors (MoF6 and DMATMS) and precursors (EDOT and SbCl5) on OH-terminated SiO2 surfaces using random sequential adsorption (RSA) simulations. We found that the order in which inhibitors are applied strongly influences the amount of SbCl5 adsorbed: The sequences DMATMS→MoF6→SbCl5 and MoF6→DMATMS→SbCl5 result in SbCl5 adsorption suppressions of 85% and 82%, respectively. These computational results are consistent with reported water contact angle measurements. Based on these findings, we provide guidance for selecting inhibitor combinations and designing irradiation sequences to minimize SbCl5 adsorption during surface processing.

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