[10p-B12-1~7] KS5 Atomic Layer Process Group | The 87th JSAP Autumn Meeting 2026

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Oral presentationKS Sessions organized by JSAP's Professional Group : KS5 Atomic Layer Process Group

[10p-B12-1~7]KS5 Atomic Layer Process Group

Thu. Sep 10, 2026 2:00 PM - 3:45 PM JST
Thu. Sep 10, 2026 5:00 AM - 6:45 AM UTC

B12 (Faculty of Engineering B Block)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-B12-1]Imaging Ellipsometry with LHAR Test Structure for Characterizing ALD-Al2O3 Film Conformality

〇Hiroshi Nishizato¹, Ishida Kanta¹, Nakaya Yugo², Nasu Kinichi³, Hirayama Mikiro³, Jin Lianhua⁴, Momose Takeshi³ (1.GSST, Kumamoto Univ., 2.HORIBA STEC, 3.REISI, Kumamoto Univ., 4.Univ. of Yamanashi)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-B12-2]Direct Observation of the Initial Oxidation Process in TDMAS/O₃ SiO₂ ALD by in-situ XPS

〇(D)Yuuki Tsuchiizu¹, Daisuke Ohori², Teruhisa Ohtsuka³, Masashi Ymazaki³, Hiroshi Arimoto³, Kazuhiko Endo¹ (1.Inst. of Fluid Sci. Tohoku Univ., 2.Kansai Univ., 3.Natl. Inst. of Adv. Ind. Sci. and Technol.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-B12-3]Development of Area Selective Deposition using iCVD

〇Kazuya Ichiki¹, Shuji Azumo¹ (1.Tokyo Electron Technology Solutions Ltd)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-B12-4]Design of optimal inhibitors for area-selective atomic layer deposition by means of random sequential adsorption simulations

〇Haruhide Miyagi¹, Shogo Shimada¹, Atsuro Seino¹, Kimihiko Nakatani¹, Hajime Karasawa¹, Takafumi Sasaki¹ (1.KOKUSAI ELECTRIC CORPORATION)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-B12-5]Adsorption Stabilization of Metal Surfaces and Inhibition of ALD TaN Growth by An Original Self-Assembled Monolayer

〇Hiroyuki Komatsu¹, Yoshifuru Shibata¹, Noriaki Wakabayashi¹, Yasutaka Kamei¹, Souichiro Akagi², Kouta Yokoyama², Yugo Tai² (1.JSR, 2.JEMT)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-B12-6]Selectivity Control in SiN-ALD Using Hydrazine and Inhibitor

〇Hayato Murata^1,2, Kousuke Ohyama², Mikiko Hasegawa², Tadamoto Anzai², Hideharu Shimizu², Mikiro Hirayama³, Takeshi Momose³ (1.GSST, Kumamoto Univ., 2.NIPPON SANSO, 3.SE, Kumamoto Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-B12-7]Study on Mo Bottom-up Filling Process using Inhibitor

〇Soga Nagai¹, Noboru Sato¹, Yuhei Otaka¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

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