The 87th JSAP Autumn Meeting 2026
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Oral presentationKS Sessions organized by JSAP's Professional Group : KS5 Atomic Layer Process Group

[10p-B12-1~7]KS5 Atomic Layer Process Group

Thu. Sep 10, 2026 2:00 PM - 3:45 PM JST
Thu. Sep 10, 2026 5:00 AM - 6:45 AM UTC
B12 (Faculty of Engineering B Block)
Chair : Takeshi Momose(Kumamoto Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-B12-1]Imaging Ellipsometry with LHAR Test Structure for Characterizing ALD-Al2O3 Film Conformality

〇Hiroshi Nishizato1, Ishida Kanta1, Nakaya Yugo2, Nasu Kinichi3, Hirayama Mikiro3, Jin Lianhua4, Momose Takeshi3 (1.GSST, Kumamoto Univ., 2.HORIBA STEC, 3.REISI, Kumamoto Univ., 4.Univ. of Yamanashi)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-B12-2]Direct Observation of the Initial Oxidation Process in TDMAS/O3 SiO2 ALD by in-situ XPS

〇(D)Yuuki Tsuchiizu1, Daisuke Ohori2, Teruhisa Ohtsuka3, Masashi Ymazaki3, Hiroshi Arimoto3, Kazuhiko Endo1 (1.Inst. of Fluid Sci. Tohoku Univ., 2.Kansai Univ., 3.Natl. Inst. of Adv. Ind. Sci. and Technol.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[10p-B12-3]Development of Area Selective Deposition using iCVD

〇Kazuya Ichiki1, Shuji Azumo1 (1.Tokyo Electron Technology Solutions Ltd)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-B12-4]Design of optimal inhibitors for area-selective atomic layer deposition by means of random sequential adsorption simulations

〇Haruhide Miyagi1, Shogo Shimada1, Atsuro Seino1, Kimihiko Nakatani1, Hajime Karasawa1, Takafumi Sasaki1 (1.KOKUSAI ELECTRIC CORPORATION)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-B12-5]Adsorption Stabilization of Metal Surfaces and Inhibition of ALD TaN Growth by An Original Self-Assembled Monolayer

〇Hiroyuki Komatsu1, Yoshifuru Shibata1, Noriaki Wakabayashi1, Yasutaka Kamei1, Souichiro Akagi2, Kouta Yokoyama2, Yugo Tai2 (1.JSR, 2.JEMT)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-B12-6]Selectivity Control in SiN-ALD Using Hydrazine and Inhibitor

〇Hayato Murata1,2, Kousuke Ohyama2, Mikiko Hasegawa2, Tadamoto Anzai2, Hideharu Shimizu2, Mikiro Hirayama3, Takeshi Momose3 (1.GSST, Kumamoto Univ., 2.NIPPON SANSO, 3.SE, Kumamoto Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-B12-7]Study on Mo Bottom-up Filling Process using Inhibitor

〇Soga Nagai1, Noboru Sato1, Yuhei Otaka1, Naoki Tamaoki1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
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