[10p-B12-1~7] KS5 Atomic Layer Process Group

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[10p-B12-5] Adsorption Stabilization of Metal Surfaces and Inhibition of ALD TaN Growth by An Original Self-Assembled Monolayer

〇Hiroyuki Komatsu¹, Yoshifuru Shibata¹, Noriaki Wakabayashi¹, Yasutaka Kamei¹, Souichiro Akagi², Kouta Yokoyama², Yugo Tai² (1.JSR, 2.JEMT)

Keywords:

Self-assembly material,Selective inhibition and selective growth control,Area selective surface modification

Thinning of barrier/liner films and control of selective growth are essential to reduce interconnect resistance and ensure reliability in advanced BEOL. In this talk, assuming Cu and Mo seed layers, we designed, synthesized, and evaluated original self-assembled monolayers (SAMs) as pre-treatment materials to selectively suppress ALD-TaN nucleation. The key points of the molecular design are: (i) high solubility and handleability compatible with aqueous processes, (ii) high affinity and coverage on Cu and Mo seed surfaces, (iii) film stability under the thermal and chemical environments before and after ALD, and (iv) adsorption inhibition capability against ALD-TaN precursors. This paper reports the results of selective growth control based on these design guidelines.