Presentation Information

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[10p-B12-6]Selectivity Control in SiN-ALD Using Hydrazine and Inhibitor

〇Hayato Murata^1,2, Kousuke Ohyama², Mikiko Hasegawa², Tadamoto Anzai², Hideharu Shimizu², Mikiro Hirayama³, Takeshi Momose³ (1.GSST, Kumamoto Univ., 2.NIPPON SANSO, 3.SE, Kumamoto Univ.)

Keywords:

atomic layer deposition,area selective deposition,hydrazine

We have previously demonstrated that, in SiN atomic layer deposition (ALD) using hydrazine (N₂H₄), both throughput and selectivity are improved compared to the conventional nitriding agent ammonia (NH₃). In this study, to further enhance the selectivity of SiN ALD using N₂H₄, N,N-dimethylaminotrimethylsilane (TMSDMA) was employed as an inhibitor. The adsorption characteristics and selectivity were evaluated through quantum chemical calculations.

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