[10p-B12-1~7] KS5 Atomic Layer Process Group

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[10p-B12-7] Study on Mo Bottom-up Filling Process using Inhibitor

〇Soga Nagai¹, Noboru Sato¹, Yuhei Otaka¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

Keywords:

molybdenum,bottom-up fill,inhibitor

Molybdenum (Mo) is highly anticipated as an interconnect material for next-generation ULSI devices. A bottom-up fill process is crucial for achieving complete gap-filling in high-aspect-ratio structures and forming low-resistance interconnects. In this study, we report on a process that promotes preferential growth at the trench bottom by suppressing film deposition at the upper portion of the trench. Specifically, a comparative study was conducted between NH₃ and H₂ as inhibitors to suppress the adsorption of the Mo(CO)₆ precursor.