[10p-C309-1~15] 15.5 Group IV crystals and alloys

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[10p-C309-1] Control of lattice strain in Ge wire structures on Si using AlN tunable stressor

〇Soki Matsushita¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.)

Keywords:

Germanium epitaxial layer,Lattice strain,Aluminum Nitride