Presentation Information

[10p-C309-13]Ge nanosheet formation on thermally grown SiO2/Si structure by N scavenging

〇(M2)Kotaro Onishi1,2, Ryotaro Sakakibara1, Yasumitsu Miyata1, Takuji Hosoi1,2 (1.NIMS, 2.Kwansei Gakuin Univ.)

Keywords:

semiconductor