[10p-C309-1~15] 15.5 Group IV crystals and alloys

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[10p-C309-2] Trench-Filling Ge Layers on Si for Surface-Illuminated Photodetectors

〇So Nozaki¹, Jose A. Piedra-Lorenzana¹, Daisuke Akai¹, Takeshi Hizawa¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech)

Keywords:

Germanium epitaxal layer,trench-filling growth,near-infrared photodetector