[10p-C309-1~15] 15.5 Group IV crystals and alloys

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[10p-C309-4] Temperature Dependence of High Schottky Barrier Height at p-Type Ge/ICO:H Interfaces

〇Tatsuro Maeda¹, Hiroyuki Ishii¹, Chia-Tsong Chen¹, Rahmat Hadi Saputro¹, Takashi Koida¹, Wen Hsin Chang¹ (1.AIST)

Keywords:

Germanium,Fermi-level pinning

In this study, we demonstrate from temperature-dependent C–V characteristics that the high barrier in an ICO:H/p-type Ge junction originates not from Fermi-level pinning, but from alignment with the Ge band edge.