[10p-C309-1~15] 15.5 Group IV crystals and alloys

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-6] Effect of the Si-cap layer on the detection characteristics of PN-junction Ge_1-xSn_x infrared detectors

〇Taiyo Yajima¹, Tomo Tanaka³, R. H. Saputro⁴, Hiroyuki Ishii⁴, Shigehisa Shibayama¹, Masashi Kurosawa¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2, Tatsuro Maeda⁴ (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NEC, 4.AIST)

Keywords:

GeSn,passivation,photodetector