[10p-C309-1~15] 15.5 Group IV crystals and alloys

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-C309-7] High crystallinity Ge_0.80Sn_0.20 epitaxial growth on Si substrate using sputtering method

〇Kousaku Goto¹, Shigehisa Shibayama¹, Tomo Tanaka², Yasutomo Omori², R. H. Saputro³, Hiroyuki Ishii³, Tatsuro Maeda³, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,4 (1.Grad. Sch. Eng., Nagoya Univ., 2.NEC, 3.AIST, 4.IMaSS Nagoya Univ.)

Keywords:

GeSn,sputtering,strain relaxed