[10p-C309-1~15] 15.5 Group IV crystals and alloys

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[10p-C309-8] Growth of Zirconium (Zr)-Doped Germanium (Ge) Alloy

〇(M1)Tensei Tajima¹, Tomo Horota¹, Yuto Kawabata¹, Yasuhiko Ishikawa¹, Keisuke Yamane¹ (1.Toyohashi Tech)

Keywords:

Germanium,Silicon Photonics,Molecular Beam Epitaxy

We propose the crystal growth of a novel GeZr alloy formed by incorporating Zr into Ge, which is attracting attention as a light-emitting material for silicon photonics. GeZr alloys were grown by MBE at 600°C and 800°C and evaluated using various characterization techniques. At 800°C, a diffraction peak attributed to GeZr and a streaky RHEED pattern were observed, confirming flat single-crystal growth with an RMS roughness of 0.71 nm and composition-level Zr incorporation. In contrast, no diffraction peak was obtained at 600°C, suggesting the formation of point defects.