[10p-C309-1~15] 15.5 Group IV crystals and alloys

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[10p-C309-9] Growth of GaGeSb Alloys with High GaSb Content for New Band Engineering

〇Tomo Horota¹, Fuga Suzuki¹, Yuto Kawabata¹, Yasuhiko Ishikawa¹, Keisuke Yamane¹ (1.Toyohasi Tech)

Keywords:

germanium,molecular beam epitaxy,Band Engineering

For novel band engineering, the crystal growth of GaGeSb ternary alloys with a Ge matrix was optimized using solid-source molecular beam epitaxy (SS-MBE) to achieve high alloy compositions. Experimental results revealed that while the addition of Ga contributes to enhancing the Sb concentration, high temperatures lead to Ga droplet formation and Sb desorption, whereas low temperatures result in the degradation of surface morphology. Consequently, we demonstrated that precise temperature control is crucial to simultaneously achieving both high crystalline quality and high alloy composition.