Presentation Information
[10p-E101-6]Polarization-Engineered Ferroelectric Nitride Photonic Integrated Devices
〇Ryuji Katayama1, Masahiro Uemukai1, Tomoyuki Tanikawa2 (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Fac. Sci. & Tech., Meijo Univ)
Keywords:
ferroelectric semiconductors,wavelength coverter,phase modulator
We have developed wavelength converters and phase modulators based on the polarization control of nitride semiconductors for unexplored-wavelength light sources and photonic integrated circuits. Among nitride materials, the ferroelectric ScAlN possesses exceptionally high physical properties, making it a highly advantageous platform for both devices. In this presentation, we introduce our latest achievements, including the demonstration of far-ultraviolet second-harmonic generation (SHG) utilizing a transverse QPM (TQPM) structure, attempts toward polarity-inversion-free wavelength conversion, and phase modulation using InGaN waveguides. Finally, we discuss the prospects for dramatic improvements in efficiency, device miniaturization, and low-voltage operation through the application of ScAlN.