Presentation Information
[10p-E101-7][The 60th Young Scientist Presentation Award Speech] X-ray Spectroscopic Characterization of Surface Oxidation of ScAlN and NbAlN
〇Hikaru Sasaki1, Takahito Takeda1, Akihira Munakata1, Kouei Kubota1, Kosuke Joya1, Tomoya Fuji1, Tomoya Okuda2, Souta Kurogi2, Masaki Kobayashi1, Atsushi Fujimori1, Atsushi Kobayashi2, Ryosho Nakane1, Masakazu Sugiyama1, Takuya Maeda1 (1.Univ. of Tokyo, 2.Tokyo Univ. of Science)
Keywords:
ScAlN,NbAlN,X-ray spectroscopy
In recent years, significant progress has been made in the research of novel nitride electronic materials that exhibit interesting physical properties by adding transition metals such as Sc and Y to AlN. Previously, we conducted detailed investigations into the surface oxidation of ScAlN using synchrotron X-ray spectroscopy. We reported that surface oxidation becomes more pronounced as the Sc composition increases, and that a rock-salt-like amorphous oxide layer exists up to a depth of approximately 8 nm from the surface. Furthermore, we have recently succeeded in the crystal growth of Nb-added AlN (NbAlN), and have reported on both its surface oxidation state and the enhancement of the two-dimensional electron gas (2DEG) achieved through regrowth on AlGaN/GaN heterojunctions. In this study, we report on the investigation of chemical bonding states and the evaluation of surface oxidation states using X-ray photoelectron spectroscopy (XPS) for MBE-grown GaN cap/ScAlN/GaN structures and sputter-grown NbAlN/GaN structures with varying Nb compositions.