Presentation Information

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10p-E206-3]Effect of ITO Sputter Deposition Temperature on PEDOT:PSS/Si Solar Cells

〇(M1)Shuto Atomi¹, Takumi Murata¹, Shinya Kato¹ (1.Nagoya tech univ)

Keywords:

silicon solar cell,PEDOT:PSS,ITO

This study investigates the effect of ITO sputter deposition temperature (200℃~360℃) on the characteristics of PEDOT:PSS/Si solar cells, aiming for future application in perovskite/Si tandem solar cells. The results showed that ITO deposition improved the short-circuit current density (JSC) and fill factor (FF) due to reduced series resistance, but decreased the open-circuit voltage (VOC), likely due to plasma damage during sputtering. The maximum conversion efficiency was achieved at a substrate setting temperature of 240℃. At higher temperatures, the thermal degradation of the PEDOT:PSS layer progressed, leading to a significant decrease in VOC and overall conversion efficiency

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