Session Details

[10p-E206-1~10]16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Sep 10, 2026 1:30 PM - 4:15 PM JST
Thu. Sep 10, 2026 4:30 AM - 7:15 AM UTC
E206 (First Year Education Bld. E Block)

[10p-E206-1]Study on Textural Forms of Bottom Silicon Surface for Perovskite/Si Tandem Photovoltaics

〇(M2)Yukito Soejima1, Ryotaro Shimma1, Genki Sugiura2, Hyunju Lee3, Yoshio Ohshita2, Atsushi Ogura1,3 (1.Meiji Univ., 2.Toyota Tech Inst., 3.Meiji Renewable Energy Laboratory)

[10p-E206-2]Research on Interlayer Transparent Conductive Thin-Film Materials for Improving the Efficiency of Perovskite/Silicon Tandem Solar Cells

〇Yoshio Ohshita1, Hyunjyu Lee3, Masahiro Okada1, Genki Sugiura1, Palanisamy Baskaran1, Atushi Ogura2,3 (1.TTI, 2.Meiji Univ., 3.Meiji MREL)

[10p-E206-3]Effect of ITO Sputter Deposition Temperature on PEDOT:PSS/Si Solar Cells

〇(M1)Shuto Atomi1, Takumi Murata1, Shinya Kato1 (1.Nagoya tech univ)

[10p-E206-4]Evaluation of Ti-doped SnO2 Thin Film Deposited by RF Magnetron Co-Sputtering

〇Tatsumi Nakamura1, Yuta Shinohara1, Genki Sugiura3, Hyunju Lee2,3, Yoshio Ohshita3, Atsushi Ogura1,2 (1.School of Sci. & Tech., Meiji Univ, 2.MREL, 3.Toyota Tech. Inst)

[10p-E206-5]Characterization of ICO Thin Films Deposited by RF Magnetron Co-Sputtering

〇Yuta Shinohara1, Ryosuke Sugaya1, Tatsumi Nakamura1, Hyunju Lee2,3, Yoshio Ohshita3, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL., 3.Toyota Tech. Inst.)

[10p-E206-6]Effect of Film Thickness Reduction on Passivation Properties of Cat-CVD SiOxNy Films

〇Yinuo Song1, Kensaku Maeda1, Keisuke Ohdaira1 (1.JAIST)

[10p-E206-7]Factors Affecting the Passivation Performance of Non-Stoichiometric Cat-CVD SiNx Films

〇Yuehong Shan1, Kensaku Maeda1, Keisuke Ohdaira1 (1.JAIST)

[10p-E206-8]Comparison of Hydrogenation for the Passivation of TOPCon Structures: Hydrogen Radical Treatment in a Cat-CVD Chamber versus Sacrificial SiNx:H Treatment

〇DUANYI YIN1, Kensaku Maeda1, Keisuke Ohdaira1 (1.JAIST)

[10p-E206-9]Effect of structural properties of nc-Si/SiOx composite filmson the passivation effect after annealing

〇Kaori Takagi1, Yasuyoshi Kurokawa2,4,5, Atsushi Masuda1,3, Noritaka Usami4,5,6, Kazuhiro Gotoh1,3 (1.Grad. Sch. Sci. Technol., Niigata Univ., 2.Grad. Sch. Sci. & Engr., Kansai Univ., 3.IRCNT, Niigata Univ., 4.Grad. Sch. Engr., Nagoya Univ., 5.InFuS, Nagoya Univ., 6.IMaSS, Nagoya Univ.)

[10p-E206-10]The Study of Hydrogen and Boron Introduction in Hall Contacts Using Silicon Nano-crystals/Silicon Oxide Composite Layer

〇(D)Hiroto Yamaguchi1,2, Yasuyoshi Kurokawa1,3, Noritaka Usami1,2,4 (1.Grad Eng., Nagoya Univ., 2.InFuS, Nagoya Univ., 3.Grad. Sch. Sci. & Eng., Kansai Univ., 4.IMaSS, Nagoya Univ.)