Presentation Information
[10p-E208-6]Phase change control of Te thin films using laser irradiation and substrate heating
〇Keisuke Hamano1, Bokusui Nakayama1, Yuta Saito2,3, Paul Fons1, Toshiharu Saiki1 (1.Keio Univ., 2.Tohoku Univ., 3.GXT Tohoku Univ.)
Keywords:
Phase Change Material,semiconductor
To develop low-power phase-change memory, single-element tellurium (Te) has attracted attention due to its lack of composition variation. Although Te thin films alter their phase stability depending on thickness, control methods and base-temperature effects remain unclear. This study aims to investigate phase control in Te thin films by combining laser irradiation and substrate heating. Te thin films were deposited on glass substrates and irradiated with a laser. Phase changes were evaluated via optical microscopy. Under room-temperature laser irradiation, changes in optical properties due to phase change were observed. Furthermore, laser irradiation with substrate heating formed a different phase compared to that at room temperature. This suggests that controlling the base temperature alters the phase transition process, enabling selective phase formation. The transition mechanisms will be discussed with first-principles calculations.